Marca: IXYS SEMICONDUCTOR

Tienda: Farnell

Disponibilidad: En almacén, envío inmediato.

MOSFET, N, TO-247; Transistor Polarity:N Channel; Continuous Drain Current Id:52A; Drain Source Voltage Vds:300V; On Resistance Rds(on):60mohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs Typ:4V; Power Dissipation Pd:360W; Operating Temperature Min:-55°C; Operating Temperature Max:150°C; Transistor Case Style:TO-247; No. of Pins:3; MSL:(Not Applicable); SVHC:No SVHC (19-Dec-2012); Avalanche Single Pulse Energy Eas:1.5J; Current Id Max:52A; Current Temperature:25°C; Full Power Rating Temperature:25°C; Junction Temperature Tj Max:150°C; Junction Temperature Tj Min:-55°C; N-channel Gate Charge:150nC; No. of Transistors:1; On State Resistance Max:60mohm; Operating Temperature Range:-55°C to +150°C; Pulse Current Idm:205A; Rate of Voltage Change dv / dt:5V/ns; Repetitive Avalanche Energy Max:30mJ; Reverse Recovery Time trr Typ:250ns; Termination Type:Through Hole; Voltage Vds Typ:300V; Voltage Vgs Max:20V; Voltage Vgs Rds on Measurement:10V; Voltage Vgs th Max:4V; Weight:6g